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Please use this identifier to cite or link to this item: http://localhost:80/xmlui/handle/123456789/10329
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dc.contributor.authorAjaz-un-Nabi, Muhammad-
dc.date.accessioned2018-02-19T04:01:21Z-
dc.date.accessioned2020-04-14T23:27:10Z-
dc.date.available2020-04-14T23:27:10Z-
dc.date.issued2014-
dc.identifier.urihttp://142.54.178.187:9060/xmlui/handle/123456789/10329-
dc.description.abstractN/Aen_US
dc.description.sponsorshipHigher Education Commission, Pakistanen_US
dc.language.isoenen_US
dc.publisherThe Islamia University of Bahawalpur, Pakistanen_US
dc.subjectNatural Sciencesen_US
dc.titleCHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXYen_US
dc.typeThesisen_US
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