Trapping levels and mobile charge determinations in thin solid films.

Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/12320

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DC Field	Value	Language
dc.contributor.author	Dr. F.M. Nazar	-
dc.date.accessioned	2021-07-07T05:54:17Z	-
dc.date.available	2021-07-07T05:54:17Z	-
dc.date.issued	1981-05-01	-
dc.identifier.uri	http://142.54.178.187:9060/xmlui/handle/123456789/12320	-
dc.description.abstract	Investigations have been carried out on the determination of the optical band gap by photoconduction measurements in cadmium phosphates. Gas thin films, and A12O3 in the form of thin film as well as single crystal. In addition to obtaining the band gap for these materials, we have also studied the traps in these materials. Interfacial surface states in MOS system have also been investigated. Many traps also exist in these materials and their photo depopulation yields the observed photoconduction.	en_US
dc.description.sponsorship	PSF	en_US
dc.language.iso	en	en_US
dc.publisher	Centre for Solid State Physics University of the Punjab, New Campus Lahore	en_US
dc.relation.ispartofseries	(PP-08);P-PU/PHYS(30)	-
dc.title	Trapping levels and mobile charge determinations in thin solid films.	en_US
dc.type	Technical Report	en_US
Appears in Collections:	PSF Funded Projects

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