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Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/1599
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dc.contributor.authorKhan, Abdul Faheem-
dc.contributor.authorMehmood, Mazhar-
dc.contributor.authorRana, A. M.-
dc.contributor.authorBhatti, M. T.-
dc.contributor.authorMahmood, A.-
dc.date.accessioned2019-11-20T10:25:48Z-
dc.date.available2019-11-20T10:25:48Z-
dc.date.issued2009-01-01-
dc.identifier.issn26077803-
dc.identifier.urihttp://142.54.178.187:9060/xmlui/handle/123456789/1599-
dc.description.abstractTin oxide (SnO2) thin films are deposited by rf-magnetron sputtering and annealed at various temperatures in the range of 100–500 °C for 15 min. Raman spectra of the annealed films depict the formation of a small amount of SnO phase in the tetragonal SnO2 matrix, which is verified by x-ray diffraction. The average particle size is found to be about 20–30 nm, as calculated from x-ray peak broadening and SEM images. Various optical parameters such as optical band gap energy, refractive index, optical conductivity, carrier mobility, carrier concentration etc. are determined from the optical transmittance and reflectance data recorded in the wavelength range 250–2500 nm. The results are analyzed and compared with the data in the literature.en_US
dc.language.isoen_USen_US
dc.publisherChinese Physical Society and IOP Publishing Ltden_US
dc.subjectNatural Scienceen_US
dc.subjectrf-Magnetronen_US
dc.subjectSnO2en_US
dc.subjectThin Filmsen_US
dc.titleOptical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Filmsen_US
dc.typeArticleen_US
Appears in Collections:Journals

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