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Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/1759
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dc.contributor.authorShah, Aqeel Ahmed-
dc.contributor.authorGuo, Zhongyi-
dc.contributor.authorXiao, Yanjun-
dc.contributor.authorJee, Sangwon-
dc.contributor.authorMoiz, S. A.-
dc.contributor.authorLee, Jung-Ho-
dc.contributor.authorShah, Qurban A.-
dc.date.accessioned2019-11-22T10:36:35Z-
dc.date.available2019-11-22T10:36:35Z-
dc.date.issued2010-10-18-
dc.identifier.isbn978-1-4244-8058-6-
dc.identifier.urihttp://142.54.178.187:9060/xmlui/handle/123456789/1759-
dc.description.abstractThe optical characteristics of the fabricated Si 1-x Ge x nanowires (SGNWs) with different compositions have been researched. Firstly, the SGNWs have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst under the temperature of 1000°C, and the length and the compositions of the SGNWs could be tuned by controlling the growth time and the mole ratios of SiCl 4 :GeCl 4 respectively. Secondly, the total reflection and the transmission of the fabricated SGNWs have been measured by the Varian Cary 5000 UV/VIS/NIR spectrophotometer in a wavelength range of 300-2000 nm for explaining the color changes of the samples. At last, we give some discussions and the explanations about the experimental results.en_US
dc.language.isoen_USen_US
dc.publisherIEEE 2010 6th International Conference on Emerging Technologies (ICET)en_US
dc.subjectEngineering and Technologyen_US
dc.subjectVLSen_US
dc.subjectOptical propertiesen_US
dc.subjectGrowth rateen_US
dc.titleOptical property of the fabricated Si1−xGex nanowiresen_US
dc.typeProceedingsen_US
Appears in Collections:Proceedings

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