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DC Field | Value | Language |
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dc.contributor.author | Shah, Aqeel Ahmed | - |
dc.contributor.author | Guo, Zhongyi | - |
dc.contributor.author | Xiao, Yanjun | - |
dc.contributor.author | Jee, Sangwon | - |
dc.contributor.author | Moiz, S. A. | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.contributor.author | Shah, Qurban A. | - |
dc.date.accessioned | 2019-11-22T10:36:35Z | - |
dc.date.available | 2019-11-22T10:36:35Z | - |
dc.date.issued | 2010-10-18 | - |
dc.identifier.isbn | 978-1-4244-8058-6 | - |
dc.identifier.uri | http://142.54.178.187:9060/xmlui/handle/123456789/1759 | - |
dc.description.abstract | The optical characteristics of the fabricated Si 1-x Ge x nanowires (SGNWs) with different compositions have been researched. Firstly, the SGNWs have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst under the temperature of 1000°C, and the length and the compositions of the SGNWs could be tuned by controlling the growth time and the mole ratios of SiCl 4 :GeCl 4 respectively. Secondly, the total reflection and the transmission of the fabricated SGNWs have been measured by the Varian Cary 5000 UV/VIS/NIR spectrophotometer in a wavelength range of 300-2000 nm for explaining the color changes of the samples. At last, we give some discussions and the explanations about the experimental results. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE 2010 6th International Conference on Emerging Technologies (ICET) | en_US |
dc.subject | Engineering and Technology | en_US |
dc.subject | VLS | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Growth rate | en_US |
dc.title | Optical property of the fabricated Si1−xGex nanowires | en_US |
dc.type | Proceedings | en_US |
Appears in Collections: | Proceedings |
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File | Description | Size | Format | |
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5638371.htm | 115 B | HTML | View/Open |
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