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Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/1760
Title: Ultraviolet light inducedphotocurrent response of graphene based field effect transistors
Authors: Iqbal, Muhammad Zahir
Anwar, Nadia
Keywords: Engineering and Technology
Detectivity
Graphene
Field effect transistor
UV sensor
Responsivity
Issue Date: 9-Oct-2017
Publisher: IEEE 14th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT (HONET-ICT)
Abstract: Owing to high charge carrier mobility, impressive absorption capacity and fast responsivity, graphene can be utilized for various light sensing applications. Under ultra violet illumination the photoconductivity response of chemical vapor deposition grown graphene based field effect transistor is studied at different drain-source and backgate voltages as a function of time. Increase in photocurrent characteristics is observed at maximum drain-source voltage of 1 V. The response of photosensitivity is tuned by varying the backgate voltage. Raman spectrum ratifies high purity of graphene. Furthermore, the performance of graphene based phototransistor is studied by analyzing responsivity, detectivity.
URI: http://142.54.178.187:9060/xmlui/handle/123456789/1760
ISBN: 978-1-5386-0759-6
Appears in Collections:Proceedings

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