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DC Field | Value | Language |
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dc.contributor.author | Khan, M I | - |
dc.contributor.author | Adil, F | - |
dc.contributor.author | Majeed, Shahbaz | - |
dc.contributor.author | Farooq, W A | - |
dc.contributor.author | Hasan, M S | - |
dc.contributor.author | Jabeen, Raheela | - |
dc.contributor.author | Al-Mutairi, Mona A | - |
dc.contributor.author | Bukhtiar, Arfan | - |
dc.contributor.author | Iqbal, Munawar | - |
dc.date.accessioned | 2019-12-16T07:29:47Z | - |
dc.date.available | 2019-12-16T07:29:47Z | - |
dc.date.issued | 2019-10-29 | - |
dc.identifier.issn | 6 126420 | - |
dc.identifier.uri | http://142.54.178.187:9060/xmlui/handle/123456789/2003 | - |
dc.description.abstract | In this research, effect of copper(Cu)doping on the structural, optical, morphological and electricalcharacteristics of diamond like carbon(DLC)thinfilms have been investigated. Thinfilms of DLC andCu doped DLC(Cu-DLC)have been deposited on glass substrates by pulsed Laser Deposition(PLD)technique. XRD results showed that at 1.5% of Cu doping, Cu form cluster in DLC. Below of thisdoping ratio, Cu has amorphous form in DLC. AFM reveals that the minimum surface roughness wasobserved for the 1.0% DLC thinfilm with the root mean square surface roughness(Rrms)of 2.07. TheRrmsvalues for the 1.5%, 2.0% and 2.5% Cu-DLC thinfilms are 2.45, 3.14 and 3.89 respectively. Theaverage sheet resistivity offilms is decreased by increasing the Cu concentration, according to FourPoint Probe technique | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Mater. Res. Express | en_US |
dc.subject | Natural Science | en_US |
dc.subject | DLC | en_US |
dc.subject | Cu | en_US |
dc.subject | thinfilms | en_US |
dc.subject | electrical | en_US |
dc.subject | optical properties | en_US |
dc.title | Structural, morphological, electrical and optical properties of Cu dopedDLC thin films | en_US |
dc.type | Article | en_US |
Appears in Collections: | Journals |
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