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Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/2003
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dc.contributor.authorKhan, M I-
dc.contributor.authorAdil, F-
dc.contributor.authorMajeed, Shahbaz-
dc.contributor.authorFarooq, W A-
dc.contributor.authorHasan, M S-
dc.contributor.authorJabeen, Raheela-
dc.contributor.authorAl-Mutairi, Mona A-
dc.contributor.authorBukhtiar, Arfan-
dc.contributor.authorIqbal, Munawar-
dc.date.accessioned2019-12-16T07:29:47Z-
dc.date.available2019-12-16T07:29:47Z-
dc.date.issued2019-10-29-
dc.identifier.issn6 126420-
dc.identifier.urihttp://142.54.178.187:9060/xmlui/handle/123456789/2003-
dc.description.abstractIn this research, effect of copper(Cu)doping on the structural, optical, morphological and electricalcharacteristics of diamond like carbon(DLC)thinfilms have been investigated. Thinfilms of DLC andCu doped DLC(Cu-DLC)have been deposited on glass substrates by pulsed Laser Deposition(PLD)technique. XRD results showed that at 1.5% of Cu doping, Cu form cluster in DLC. Below of thisdoping ratio, Cu has amorphous form in DLC. AFM reveals that the minimum surface roughness wasobserved for the 1.0% DLC thinfilm with the root mean square surface roughness(Rrms)of 2.07. TheRrmsvalues for the 1.5%, 2.0% and 2.5% Cu-DLC thinfilms are 2.45, 3.14 and 3.89 respectively. Theaverage sheet resistivity offilms is decreased by increasing the Cu concentration, according to FourPoint Probe techniqueen_US
dc.language.isoen_USen_US
dc.publisherMater. Res. Expressen_US
dc.subjectNatural Scienceen_US
dc.subjectDLCen_US
dc.subjectCuen_US
dc.subjectthinfilmsen_US
dc.subjectelectricalen_US
dc.subjectoptical propertiesen_US
dc.titleStructural, morphological, electrical and optical properties of Cu dopedDLC thin filmsen_US
dc.typeArticleen_US
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