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Please use this identifier to cite or link to this item: http://142.54.178.187:9060/xmlui/handle/123456789/2066
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dc.contributor.authorMurtaza, G.-
dc.contributor.authorAhmad, Iftikhar-
dc.contributor.authorMaqbool, M.-
dc.contributor.authorAliabad, H. A. Rahnamaye-
dc.contributor.authorAfaq, A.-
dc.date.accessioned2020-01-01T07:03:43Z-
dc.date.available2020-01-01T07:03:43Z-
dc.date.issued201-01-01-
dc.identifier.issn28 117803-
dc.identifier.urihttp://142.54.178.187:9060/xmlui/handle/123456789/2066-
dc.description.abstractChemical bonding as well as structural, electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings.en_US
dc.language.isoen_USen_US
dc.publisherChinese Physics Lettersen_US
dc.subjectNatural Scienceen_US
dc.subjectStructural and Optoelectronic Propertiesen_US
dc.subjectCubic CsPbF3en_US
dc.subjectNovel Applicationsen_US
dc.titleStructural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applicationsen_US
dc.typeArticleen_US
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