Please use this identifier to cite or link to this item:
http://142.54.178.187:9060/xmlui/handle/123456789/10329| Title: | CHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY |
| Authors: | Ajaz-un-Nabi, Muhammad |
| Keywords: | Natural Sciences |
| Issue Date: | 2014 |
| Publisher: | The Islamia University of Bahawalpur, Pakistan |
| Abstract: | N/A |
| URI: | http://142.54.178.187:9060/xmlui/handle/123456789/10329 |
| Appears in Collections: | Thesis |
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