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Title: | Formation of Co-implanted Silicon Ultra-Shallow Junctions for Low Thermal Budget Applications |
Authors: | Mustafa, Rehana Ahmed, S. Khan, E. U. |
Keywords: | Natural Science Silicon Ultra-Shallow Junctions Low Thermal Budget Applications |
Issue Date: | 1-Jan-2013 |
Publisher: | Institute of Physics (IOP) |
Abstract: | We present a systematic study to create ultra-shallow junctions in n-type silicon substrates and investigate both pre- and post-annealing processes to create a processing strategy for potential applications in nano-devices. Starting wafers were co-implanted with indium and C atoms at energies of 70 keV and 10 keV, respectively. A carefully chosen implantation schedule provides an abrupt ultra-shallow junction between 17 and 43 nm with suppressed sheet resistance and appropriate retained sheet carrier concentration at low thermal budget. A defect doping matrix, primarily the behavior and movement of co-implant generated interstitials at different annealing temperatures, may be engineered to form sufficiently activated ultra-shallow devices. |
URI: | http://142.54.178.187:9060/xmlui/handle/123456789/1465 |
ISSN: | 30 016101 |
Appears in Collections: | Journals |
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