Please use this identifier to cite or link to this item: http://localhost:80/xmlui/handle/123456789/1465
Title: Formation of Co-implanted Silicon Ultra-Shallow Junctions for Low Thermal Budget Applications
Authors: Mustafa, Rehana
Ahmed, S.
Khan, E. U.
Keywords: Natural Science
Silicon
Ultra-Shallow Junctions
Low Thermal Budget
Applications
Issue Date: 1-Jan-2013
Publisher: Institute of Physics (IOP)
Abstract: We present a systematic study to create ultra-shallow junctions in n-type silicon substrates and investigate both pre- and post-annealing processes to create a processing strategy for potential applications in nano-devices. Starting wafers were co-implanted with indium and C atoms at energies of 70 keV and 10 keV, respectively. A carefully chosen implantation schedule provides an abrupt ultra-shallow junction between 17 and 43 nm with suppressed sheet resistance and appropriate retained sheet carrier concentration at low thermal budget. A defect doping matrix, primarily the behavior and movement of co-implant generated interstitials at different annealing temperatures, may be engineered to form sufficiently activated ultra-shallow devices.
URI: http://142.54.178.187:9060/xmlui/handle/123456789/1465
ISSN: 30 016101
Appears in Collections:Journals

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